The South Korean giant has been a main supplier of the high-bandwidth memory chips catering to AI chipsets for companies like Nvidia.

The world's second-largest memory chipmaker SK Hynix said on Thursday it began mass production of a 12-layer version of the latest generation of high-bandwidth memory (HBM) chips, to meet demand from the current AI boom.

The South Korean tech giant revealed it has started mass production of the world’s first 12-layer version of its HBM3E chips, marking a significant step forward in the race to develop advanced memory solutions for artificial intelligence (AI) applications.

SK hynix begins volume production of the world's first 12-layer HBM3E memory with up to 36GB capacities, and 9.6Gbps bandwidth for AI GPUs.

DRAM chip SK hynix has announced the mass production of the 12-layer HMB3E with 36GB capacity, promising to supply it to customers within the year. The new 12-layer HBM3E, according to SK hynix, will meet the world's highest standards in areas,

SK Hynix Inc. announced today that it has begun mass production of the world's first 12-layer HBM3E product with 36GB [i], the largest capacity of existing HBM [ii] to date. 1Previously, the maximum capacity of HBM3E was 24GB from eight vertically stacked 3GB DRAM chips.

SK hynix Inc. has commenced mass production of its 12-layer High Bandwidth Memory 3E (HBM3E) modules, featuring a total capacity of 36 GB. This marks the largest capacity achieved in HBM technology to date.

SK hynix kicks off mass production of 12-Hi HBM3E for AMD's MI 325X, Nvidia's Blackwell Ultra, other high-performance processors.

SK Hynix’s shares surged by more than 9% on Thursday as the South Korean company commenced mass production of its most advanced high-bandwidth memory (HBM) chips, known as HBM3E. These chips, featuring 12 layers and a 50% larger capacity than the previous generation,

Should be Jensen Huang's hands in less than 60 days Korea's SK hynix revealed on Thursday that it had become the first chip manufacturer to mass produce the much-anticipated 36 GB 12-layer HBM3E chip.