Rather than employing some kind of variation of the commonly used silicon-based, field-effect transistor (FET), it's all done with two thin layers of boron nitride, a ferroelectric transistor (FeFET).

MIT physicists have created a transistor using a ferroelectric material that could revolutionize electronics. The material— an innovation of the same core team and colleagues in 2021— is ...

The innovative transistor could also revolutionize data centers that house our cloud-stored information. According to the ...

We have proposed, designed, and experimentally demonstrated ultrathin InGaZnO (IGZO) channel ferroelectric‐HfO 2 field‐effect transistors (FETs) with memory operation toward 3D vertical‐stack ...

(Ashoori and Jarillo-Herrero Labs) The transistor is made from a recently invented ultrathin ferroelectric material (with positive and negative charges on different levels) based on boron nitride. Two ...

Microelectronics Co-Design Team member Prabhat Kumar of the Applied Mathematics & Computational Research Division used the ...

Although the team’s results are based on a single transistor in the lab, “in several aspects its properties already meet or exceed industry standards” for the ferroelectric transistors produced today, ...

Can ferroelectric materials help transistors overcome the 'Boltzmann tyranny' that limits the performances of conventional semiconductor devices? You have full access to this article via your ...

Our smartphones are incredibly powerful today—far beyond what computers could do just a few decades ago. But with the ...

This funding will speed up the commercialization of our ferroelectric field-effect transistor (FeFET) and capacitor (FeCAP) technology into exponentially increasing markets in the AI, IoT, embedded ...